NVD5865NL
TYPICAL CHARACTERISTICS
80
70
60
V GS = 10 V
4.5 V
4V
3.8 V
3.6 V
T J = 25 ° C
80
70
60
V DS ≥ 10 V
50
50
40
3.4 V
40
30
20
3.2 V
3V
30
20
T J = 25 ° C
10
0
0
1
2
2.8 V
2.6 V
3
4
5
10
0
1
T J = 125 ° C
2
T J = ? 55 ° C
3
4
5
0.030
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
I D = 38 A
0.018
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
T J = 25 ° C
0.025
0.020
T J = 25 ° C
0.016
0.014
V GS = 4.5 V
V GS = 10 V
0.015
0.012
0.010
2
3
4
5
6
7
8
9
10
0.010
5
10
15
20
25
30
35
40
2.2
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 3. On ? Resistance vs. Gate Voltage
10000
I D , DRAIN CURRENT (A)
Figure 4. On ? Resistance vs. Drain Current
2.0
1.8
I D = 38 A
V GS = 10 V
V GS = 0 V
T J = 150 ° C
1.6
1.4
1.2
1.0
0.8
1000
T J = 125 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150 175
100
10
20
30
40
50
60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
相关PDF资料
NVD5867NLT4G MOSFET N-CH 60V 18A DPAK-4
NVD5890NT4G MOSFET N-CH 40V 100A DPAK
NVD6415ANLT4G MOSFET N-CH 100V 23A DPAK-4
NVF2955PT1G MOSFET P CH 60V 1.7A SOT223
NVF5P03T3G MOSFET P-CH 30V 3.7A SOT-223
NVMFD5877NLT1G MOSFET N-CH 60V 17A 8SOIC
NVMFS4841NT1G MOSFET N-CH 30V 89A SO-8FL
NVMFS5844NLT1G MOSFET N-CH 60V 11.2S SO-8FL
相关代理商/技术参数
NVD5867NLT4G 功能描述:MOSFET NFET 60V 18A 43MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD5890N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 123 A, Single Na??Channel DPAK
NVD5890NL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 3.7 m, 123 A, Single N.Channel DPAK
NVD5890NLT4G 功能描述:MOSFET 40V T2 DPAK USR GRESHAM F RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD5890NT4G 功能描述:MOSFET 8-64MHZ 3.3V GP EMI RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD-6 制造商:EDI 制造商全称:Electronic devices inc. 功能描述:NIGHT VISION H.V. RECTIFIER DIODES & ARRAYS
NVD6414ANT4G 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD6415ANL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 23 A, 56 m Logic Level